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LU9DCE > ALL 27.03.26 20:45l 24 Lines 1057 Bytes #999 (0) @ WW
BID : 10212_LU9DCE
Read: OE5RCO GAST
Subj: ELECTRONICS FACTS 27-MAR
Path: DB0FFL<OE2XZR<OE6XPE<DB0RKB<DK0WUE<PI8ZTM<PA8F<PI8LAP<VE2PKT<VE3CGR<
LU9DCE
Sent: 260327/1830Z 10212@LU9DCE.TOR.BA.ARG.SOAM LinBPQ6.0.25
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PACKET RADIO STATION - BUENOS AIRES (GF05OM)
PYTHON SCHEDULED NEWSLETTERS (PSN)
COPYRIGHT 2026 - EDUARDO A. CASTILLO
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THE QUANTUM TUNNELING EFFECT IN FLASH MEMORY ALLOWS ELECTRONS TO PASS
THROUGH OXIDE BARRIERS, ENABLING DATA STORAGE. THIS SAME PHENOMENON
WOULD MAKE SILICON-BASED TRANSISTORS FAIL AT EXTREMELY SMALL SCALES,
WHICH IS WHY ENGINEERS DEVELOPING SUB-7NM CHIPS ARE EXPLORING NEW
MATERIALS LIKE GRAPHENE AND CARBON NANOTUBES THAT CAN SUSTAIN QUANTUM
TUNNELING RATHER THAN SUFFER FROM IT.
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